Academic Qualifications:

• B.Sc. Eng., M.Sc. Eng., (BUET, Bangladesh), PhD (DCU, Ireland)
• FIEB, Bangladesh
• SMIEEE, USA
• Member, IEEE EDS, USA

Correspondence:

Telephone: +88-01815007759 (cell)

+880-2-(9665650-80, 8614640-44, 8616833-38)/Ext. 6155 (Off.)
FAX: +880-2-8613046/8613026/8611594
Emails: islams@eee.buet.ac.bd, islams44@yahoo.com

Teaching Experiences:

• July 2005 ~ Present, Dept. of EEE, BUET, Dhaka, Professor
• April 2005 ~ June 2005, RIE, Shizuoka University, Japan, Visiting Professor
• June 2003 ~ March  2005, RIE, Shizuoka University, Japan, Associate Professor
• February 1999 ~ June 2003, Dept. of EEE, BUET, Dhaka, Associate Professor
• Jan 1992 ~ Feb 1999, Dept. of EEE, BUET, Dhaka, Assistant Professor
• Jul 1989 ~ Jan 1992, Dept. of EEE, BUET, Dhaka, Lecturer

Teaching:

• EEE 6410 - Semiconductor Characterization Technology
• EEE 6402 - Compound Semiconductor Devices
• EEE 421 - VLSI-I
• EEE 207 - Electronics-II
• EEE 201 - Electronics-I

Research Interests:

• Device physics, modeling, fabrication and characterization of high-speed devices (MESFETs and HEMTs) using different III-V compound semiconductor materials such as GaAs, GaN, SiC and InP.
• Monolithic Microwave Integrated Circuits (MMIC) fabrication, design and characterization.
• III-V MicroElectro Mechanical Systems (MEMS) fabrication and implementation.
• Fabrication and characterization of photonic devices such as SHG, modulators, etc. using ferroelectric material (Lithium Niobate).
• Fabrication and characterization of optoelectronic devices such as Laser diodes using III-V compound semiconductors.
• Nanoelectronics (Device Physics and Modeling of TFETs, Nanowire FETs & Junctionless FETs)
• Organic Solar Cells  

Publications:

    (a) Journal Publications:

1. S. I. Ali, M. S. Islam, and M. R. Islam, “A comprehensive review of energy efficient content addressable memory for network applications,” Journal of Circuits, Systems and Computers, Vol. 25, No. 4, 2016 DOI: 10.1142/S0218126616300026.
2. S. I. Ali and M. S. Islam, “Improved charge-shared match-line sensing scheme for dynamic energy reduction in TCAM,” IETE Journal of Research, Febuary 2015 DOI: 10.1080/03772063.2015.1018847.
3. S. I. Ali and M. S. Islam, “A match-line dynamic energy reduction technique for high-speed ternary CAM using dual feedback sense amplifier,” Journal of Microelectronics, Vol. 45, Issue 1. 2014, pp. 95–101, ELSEVIER http://dx.doi.org/10.1016/j.mejo.2013.10.006
4. S. I. Ali and M. S. Islam, “An energy efficient design of high-speed ternary CAM using match-line segmentation and resistive feedback in sense amplifier,” Journal of Computers, Vol.7, No. 3, 2012, pp.567-577.
5. S. I. Ali and M. S. Islam, “A High-Speed and Low-Energy Ternary Content Addressable Memory Design using Feedback in Match-Line Sense Amplifier,” Int’l J. Electrical and Computer Engineering, Vol.6, No. 1, 2010, pp.28-36.
6. M. Minakata, M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Very-deep nanometer-size domain inversion in LiNbO₃: proposal for circular form full cover electrodes," Jpn. J. Appl. Phys. Vol.66, No.7A, 2007, pp.4138-4143.
7. M. Minakata, M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Nanometer size periodic domain inversion in LiNbO₃ substrate using circular form full cover electrodes," Solid-State Electron.., Vol.50, 2006, pp. 848-852.
8. M. S. Islam and M. M. Zaman, "A seven-parameter nonlinear I-V characteristics model for sub-mm range GaAs MESFETs," Solid-State Electron., Vol.48, 2004, pp. 1111-1117.
9. M. S. Islam, M. Q. Huda, A. H. M. Zahirul Alam and P. J. McNally, "Performances of Novel Pd/Sn and Pd/Sn/Au Ohmic Metallizations to n-GaAs," Microelectron. Eng., Vol. 60, Issue 3-4, 2002, pp. 457-467.
10. M. S. Islam and P. J. McNally, "Novel Non-alloyed Thermally Stable Pd/Sn and Pd/Sn/Au Ohmic Contacts for the Fabrication of GaAs MESFET's," IEEE Trans. Electron. Dev., Vol. 48, No. 4, 2001, pp. 823-825.
11. M. Q. Huda, S. A. Siddiqui and M. S. Islam, "Explaining the Erbium Luminescence Profile in Silicon Under Short Excitation Pulses," Solid-State Comm., Vol. 118, 2001, pp. 235-239.
12. M. S. Islam, M. Q. Huda, A. H. M. Zahirul Alam and P. J. McNally, "Performances of Novel Pd/Sn and Pd/Sn/Au Ohmic Metallizations to n-GaAs," Microelectron. Eng., 2001 (accepted in August 9, 2001).
13. M. S. Islam, P. J. McNally, A. H. M. Zahirul Alam and M. Q. Huda, "Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic contacts for GaAs MESFET's: Technology and Performance," Solid-State Electron., Vol. 44, 2000, pp. 655-661.
14. M. S. Islam, "Recent Advances in Ni-Based Ohmic Contacts to n-GaAs," J. Elect. Eng., Vol. 27,   No. 1, 1999, pp. 43-55.
15. M. S. Islam, "Characterization of GaAs MESFET's with Novel Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts," J. Elect. Eng., Vol.27, No. 2, 1999, pp. 31-34.
16. M. S. Islam and P. J. McNally, "Thermally Stable Pd/Sn and Pd/Sn/Au Ohmic Contacts to n-type GaAs," Thin Solid Films, Vol.320, 1998, pp.253-259.
17. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Properties of Pd/Sn Ohmic Contacts on  n-GaAs," J. Materials Processing Technol., Vol. 77, 1998, pp.42-49.
18. M. S. Islam and M. Q. Huda, "GaAs MESFETs Fabricated with Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts," J. Elect. Eng., Vol. 26, No. I & II, 1998, pp. 5-7.
19. M. S. Islam and P. J. McNally, "A Comparison Study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni Ohmic Contacts to n-GaAs," Microelectron. Eng., Vol. 40, 1998, pp.35-42.
20. M. S. Islam and P. J. McNally, "Effects of Metallization Thickness on the Thermal and Long-Term Stability of Pd/Sn Ohmic Contacts to n-GaAs," Phys. Stat. Sol. (a), Vol. 165, 1998, pp.417-426.
21. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "The Importance of the Pd to Sn Ratio and Annealing Cycles on the Performance of Pd/Sn Ohmic Contacts to n-GaAs," Thin Solid Films, Vol. 292, 1997, pp. 264-269.
22. M. S. Islam, P. J. McNally and D. C. Cameron, "Thermal Stability of the Non-alloyed Pd/Sn and Pd/Ge Ohmic Contacts to n-GaAs," Thin Solid Films, Vol. 308-309, 1997, pp.607-610.
23. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Effects of Au Overlayers on the Electrical and Morphological Characteristics of Pd/Sn Ohmic Contacts to n-GaAs," Thin Solid Film, Vol. 290-291, 1996, pp. 417-421.
24. S. I. Khan and M. S. Islam, "Analysis of a Balanced Output Converter," J. Elect. Eng., Vol.19, 1991, pp.9-14.

    (b) Conference and Workshop Proceedings:

1. T. Roy, I. U. Zaman and M. S. Islam, “Novel FinFET domino logic circuit using dual keepers,” Proc. 1^st  Int’l Conf. on Electrical and Information & Communication Technology (ICEEICT 2014), Military Institute of Science and Technology (MIST), Dhaka, Bangladesh, April, 10-14, 2014 (Paper ID: 193).
2. M. S. Islam and S. I. Ali,  “Improved charge shared scheme for low-energy match line sensing in ternary content addressable memory,” Proc. 2014 IEEE Int’l Symposium on Circuits and Systems (ISCAS2014), Melbourne, Australia, June 1-5, 2014, Paper ID. 1081.
3.  I. Zaman , T. Roy and M. S. Islam, “Power, delay and area optimization in a full-adder circuit using FinFETs,” Proc. Int’l Conf. on Electrical, Information and Communication Technology (ICEICT 2013), Khulna, Bangladesh , 19 December -21, 2013.
4.  A. J. Chowdhury, M. S. Rizwan and M. S. Islam, “An Efficient VLSI Design Approach To Reduce Static Power Using Variable Body Biasing,” Proc. Int’l Conf. on Electrical, Computer, Electronics and Communication Engineering (ICECECE 2012), Venice, Italy, April 11-13, 2012, pp.263-267.
5. S. I. Ali and M. S. Islam,  “A Current Race-Based Technique with Dual Feedback for Match-Line Energy Reduction in Ternary Content Addressable Memory,” Proc. 7^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2012), Dhaka, Bangladesh, December 20-22, 2012, Paper No. 087.
6. T. Ahmed, A. T. Khan, and M. S. Islam, “Two Dimensional Analytical Potential Distribution Model for GaN MESFET,” Proc. Int’l Conf. on  Devices Circuits and Systems” (ICDCS’12), March 15 - 16, 2012, Coimbatore, India, pp.252-255.
7. T. Izma, P. Barua, M. R. Rahman, P. Sengupta and M.S. Islam," Novel Approaches to Low Leakage and Area Efficient VLSI Design," Proc. Int’l Conf. on Informatics, Electronics and Vision (ICIEV2012), May 18-19, 2012, Dhaka, Bangladesh, pp. 316-319.
8. S. I. Ali and M. S. Islam, “A Novel Low-Energy Match Line Sensing Scheme for Ternary Content Addressable Memory Using Charge Sharing,” Proc. 29^th  Norchip Conference, Lund, Sweden, November 14-15, 2011, pp.1-4.
9. S. I. Ali and M. S. Islam, “A High-speed and Low-power Ternary CAM Design Using Match-line Segmentation and Feedback in Sense Amplifiers,” Proc. 13^th  Int. Conf. on Computer and Information Technology (ICCIT 2010), Dhaka, Bangladesh, December 23-25, 2010, pp.221-226.
10. M. S. Islam, M. R. K. Akanda, S. Anwar and A. Shahriar, “Analysis of Resistances and Transconductance of SiC MESFET Considering Fabrication Parameters and Mobility as a Function of Temperature,” Proc. 6^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 5-8.
11. M. S. Islam and M. R. K. Akanda, “3D Temperature Distribution of SiC MESFET Using Green’s Function,” Proc. 6^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 13-16.
12. M. S. Islam, M. R. K. Akanda, S. Anwar and A. Shahriar, “Analysis of Resistances and Transconductance of SiC MESFET Considering Fabrication Parameters and Mobility as a Function of Temperature,” Proc. 6^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 5-8.
13. M. S. Islam and M. R. K. Akanda, “3D Temperature Distribution of SiC MESFET Using Green’s Function,” Proc. 6^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 13-16.
14. M. S. Islam, M. S. Nasrin, N. Mansur and N. Tasneem, “Dual Stack Method: A Novel Approach to Low Leakage and Speed Power Product VLSI Design,” Proc. 6^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 89-92.
15. S. I. Ali and M. S. Islam, “High-speed and Low-energy Ternary Content Addressable Memory Using Two-step Comparison and Feedback Sense Amplifier” Proc. 6^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2010), Dhaka, Bangladesh, December 18-20, 2010, pp. 93-96.
16. M. S. Islam,/font> M. Islam, M. R. Hasan and S. M. N. Islam, "An improved DC I-V characteristics model for SiC MESFETs incorporating self-heating effect," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 204-208.
17. N. Karmakar, M. Z. Sadi, M. K. Alam andpan> M. S. Islam, "A novel 10 transistor low-power and high speed pass transistor based full adder cell," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 405-408.
18. N. Karmakar, M. Z. Sadi, M. K. Alam and M. S. Islam, "A novel dual sleep approach to low leakage and area efficient VLSI design," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 409-414.
19. M. S. Islam, M. Islam, M. R. Hasan and S. M. N. Islam, "An improved nonlinear DC I-V characteristics model for nanometer range GaAs MESFETs," The IEEE TENCON 2009, Singapore, November 23-26, 2009 (accepted).
20. M. S. Islam and M. Minakata, "Very deep nanoscale domain inversion in LiNbO₃ for high power and high efficiency SHG devices," Proc. 5^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 555-560.
21. M. Z. Sadi, N. Karmakar, M. K. Alam and M. S. Islam, "Comparative analysis of subthreshold swing models for different double gate MOSFETs," Proc. 5^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 152-157.
22. R. R. Hossain, M. K. Chowdhury, E. M. Shujon and M. S. Islam, "Optical directional coupler switch using domain inversion technology," Proc. 5^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 113-116.
23. M. S. Islam, M. Minakata, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Fabrication of  very-deep nanometer-size domain inversion in LiNbO₃ by circular form FCE," 4^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2006), Dhaka, Bangladesh, December 19-21, 2006, pp. 257-261.
24. T.A. Amin, C.M. Arif, A.T. Rasin, S.M. Mominuzzaman and M. S. Islam, "Spectral photoresponse og nitrogen incorporated carbon thin films," Proc. 4^th  Int. Conf. on Electrical and Computer Engineering (ICECE 2006), Dhaka, Bangladesh, December 19-21, 2006, pp. 374-377.
25. M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama, H. Awano and M. Minakata, "Fabrication of  nanometer size periodic domain inversion in LiNbO₃ using circular form FCE method," Proc. 4^th Int'l Conf. on Global Research and Education: Inter-academia 2005, Wuppertal, Germany, Sept. 19-22, 2005, pp. 1-9.
26. M. S. Islam, S. Nagano, S. Yoneyama, and M. Minakata, "Formation of small size domain inversion using circular form FCE method," Optics Japan 2004, Osaka University, Japan, 4pD6, 2004, pp.76-77.
27. S. Nagano, M. S. Islam, S. Yoneyama and M. Minakata, "Formation of small size domain inversion using circular form FCE method," Proc. 8^th Joint Int'l Conf. on Advanced Science & Technology (JICAST2004), Zhejiang University, Hangzhou, China, December 24-25, 2004, pp. 59-62.
28. S. Yoneyama, M. S. Islam, K. Suzuki, H. Awano, and M. Minakata, "Bio-conjugate photosensitive FET using photosystem I," Ext. Abst. The 52^nd Spring Meeting, The Japan Soc. Appl. Phys., Saitama University, Japan, March 29- April 1, 2004, YY6, p.115.
29. M. Zaman and M. S. Islam, "Modeling of Nonlinear I-V Characteristics for Submicron GaAs MESFETs," Proc. 2^nd Int. Conf. on Electrical and Computer Engineering (ICECE 2002), Dhaka, Bangladesh, December 26-28, 2002, pp.304-307.
30. M. S. Islam, M. Rahman, M. M. Hasan, M. N. Islam, K. Arifuzzaman, M. Q. Huda and A. H. M. Zahirul Alam, "Analytical Modeling of Deep-Sub-Micron Thin-Film Fully-Depleted Cylindrical Gate MOSFET," Proc. 9th Int. Symp. on Integrated Circuits, Devices & Systems (ISIC-2001), Singapore, 3-5 September 2001, pp. 386-389.
31. M. S. Islam, M. Rahman, Q. A. Iqbal, M. K. Husain and M. Q. Huda, "Analytical Modelling of Threshold Voltage Shift in Short Channel Fully Depleted Cylindrical Gate MOSFET," Proc. IEEE Int. Conf. on Electrical & Computer Eng. (ICECE 2001), 5-6 January 2001, Dhaka, Bangladesh,  pp. 179-182.
32. M. Q. Huda and M. S. Islam, "Mathematical Modeling for Erbium Luminescence in Silicon," Proc. IEEE Int. Conf. on Electrical and Computer Eng. (ICECE 2001), 5-6 January 2001, Dhaka, Bangladesh, pp. 44-45.
33. A. H. M. Zahirul Alam, M. F. Momen, M. S. Islam and P.  K. Saha, "Analytical Model for Subthreshold Current in Short-channel Fully-depleted SOI MOSFETs Incorporating Velocity Overshoot," Design, Modeling and Simulation in Microelectronics, 28-30 November 2000, Singapore, Proc. of SPIE, Vol. 4228, pp. 259-269.
34. M. S. Islam, M. Rahman, Q. A. Iqbal, M. T. Khan and M. K. Husain, "Double-Gate SOI MOSFET's - Trends in Scaling Theory," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 529-542.
35. M. Q. Huda and M. S. Islam, "The 1.54 micrometer Erbium Luminescence in Silicon-germanium," Int'l Symposium on Microelectronics and Applications (ISMA'2000), 28-30 November 2000, Singapore, Proc. of SPIE, Vol. 4227, pp. 44-47.
36. M. S. Islam and P. J. McNally, "SIMS Analysis of Non-alloyed Pd/Sn, Pd/Sn/Au and Alloyed Au/Ge/Au/Ni/Au Ohmic Contacts to n-GaAs," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 497-504.
37. M. S. Islam, P. J. McNally, M. Q. Huda and A. H. M. Zahirul Alam, "A Comparative Study of Non-alloyed Pd-based and Alloyed Ni-based Ohmic Contacts to n-GaAs," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 505-512.
38. M. Q. Huda, A. R. Peaker and M. S. Islam, "The Role of Annealing Temperature on Optical Activation of Erbium Atoms in Ion Implanted Structures," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 489-496.
39. M. S. Islam, A. H. M. Zahirul Alam and M. Q. Huda, "Measurement of Semiconductor Energy Gap Using Absorption Spectrum," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India, 14-18 December 1999, pp. 234-238.
40. M. S. Islam, A. H. M. Zahirul Alam and M. Q. Huda, "Advantages and Problems of Thermal Evaporation and Conventional Annealing of Metallizations for the Fabrication of GaAs MESFET's," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India,  14-18 December 1999, pp. 588-593.
41. M. Q. Huda, S. A. Siddique, M. N. Islam and M. S. Islam, "The Mechanism for Erbium Luminescence in Silicon at 1.54 micrometer," in Photonics and Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, S. T. Ho, Y. Zhou, W. W. Chow and Y. Arakawa,, Editors, Proc. of SPIE, Vol. 3899, 1999, pp. 330-334.
42. M. Q. Huda and M. S. Islam, "Erbium Centers in Silicon and the Corresponding Luminescence," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India,  14-18 December 1999, pp. 387-390.
43. M. Q. Huda and M. S. Islam, "X-Ray Analysis of Epitaxially Recrystallized Si/Si1-xGex/Si Structures," Proc. Int. Conf. on Material Science and Technology, BUET, Dhaka, Bangladesh, 23-27 October 1999, pp. 136-139.
44. M. S. Islam, "Recent Developments in Ohmic Metallizations to p-type GaAs," Proc. Int. Conf. on Structure, Processing and Properties of Materials (SPPM'97), BUET, Dhaka, Bangladesh, 15-17 November 1997, pp. C82-C93.
45. M. S. Islam, "Non-alloyed Pd/Sn/Au and Alloyed Au-Ge/Ni Ohmic Contacts to n-GaAs: A Comparative Study," Proc. Int. Conf. on Structure, Processing and Properties of Materials (SPPM'97), BUET, Dhaka, Bangladesh, 15-17 November 1997, pp. D11-D16.
46. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Comparison of Pd/Sn and Pd/Sn/Au Thin-Film Systems for Device Metallization," Mater. Res. Soc. Symp. Proc., Vol. 427, 1996, pp. 583-589 (Mater. Res. Soc. (MRS) 1996 Spring Meeting, San Francisco, USA,  8-12 April 1996).
47. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Ohmic Contacts to n-type GaAs made with Pd/Sn and Pd/Sn/Au Metallizations," Proc. of the 8th Mediterranean Electrotechnical Conf. (melecon '96), Bari, Italy, 13-16 May 1996, pp. 385-388.
48. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Effects of Annealing Cycles on the Electrical and Morphological Characteristics of Pd/Sn Ohmic Contacts to n-GaAs," Proc. of the 8th Mediterranean Electrotechnical Conf. (melecon '96), Bari, Italy, 13-16 May 1996, pp. 1294-1297.
49. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Characterization of Pd/Sn Ohmic Contacts on n-GaAs using Electrical Measurements, EDAX and SIMS," Proc. of the 3rd  IEEE Int. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO'95), King's College London, UK, 27 November 1995, pp. 26-31.
50. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "A Novel Pd-Based Ohmic Contact System for n-type GaAs: A Structural, Morphological and Electrical Investigation," Proc. of the 6th European Conf. on Applications of Surface and Interface Analysis (ECASIA'95), Montreux, Switzerland, 9-13 October 1995, published by Wiley & Sons, pp.299-302.
51. M. S. Islam, P. J. McNally and D. C. Cameron, "Palladium-Based Ohmic Contacts to n-type GaAs- A Review of Recent Advances," Proc. of the Int. Conf. on Advances in Materials and Processing Technologies (AMPT'95), Vol. I, Dublin City University, Ireland, 8-12 August 1995, pp. 18-29.
52. S. I. Khan and M. S. Islam, "Analysis of a Single Phase Direct Frequency Changer for Input Unbalance Correction," Proc. of 1991 Int. Conf. on Industrial Electronics, Control and Instrumentation (IECON'91), Kobe, Japan, 28 Oct.-1 Nov. 1991, pp.216-221.